Effect of Interfacial Potential on Elementary Exciton Processes in InP-based Core/shell Quantum Dots
Effect of Interfacial Potential on Elementary Exciton Processes in InP-based Core/shell Quantum Dots
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Washington: American Chemical Society
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Washington: American Chemical Society
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Suppression of Auger recombination rate in semiconductor quantum dots (QDs) is essential for various applications such as LEDs and lasers. We investigate the effect of interfacial potential on Auger recombination processes in InP-based core/shell quantum dots (c/s QDs) using femtosecond transient absorption spectroscopy (fs-TAS). We have synthesize...
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Effect of Interfacial Potential on Elementary Exciton Processes in InP-based Core/shell Quantum Dots
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TN_cdi_chemrxiv_primary_65697a2729a13c4d4767bc57
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_chemrxiv_primary_65697a2729a13c4d4767bc57
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2573-2293
DOI
10.26434/chemrxiv-2023-1d3lx
