Boron-Implanted 3C-SiC for Intermediate Band Solar Cells
Boron-Implanted 3C-SiC for Intermediate Band Solar Cells
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Publisher
Pfaffikon: Trans Tech Publications Ltd
Journal title
Language
English
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Publisher
Pfaffikon: Trans Tech Publications Ltd
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Scope and Contents
Contents
Sublimation-grown 3C-SiC crystals were implanted with 2 atomic percent of boron ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 8.5×1016 atoms/cm2. The samples were then annealed at 1400, 1500 and 1600 °C for 1h at each temperature. The buried boron box-like concentration profile can reach ~2×1021...
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Full title
Boron-Implanted 3C-SiC for Intermediate Band Solar Cells
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Record Identifier
TN_cdi_cristin_nora_10852_64933
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_cristin_nora_10852_64933
Other Identifiers
ISBN
3035710422,9783035710427
ISSN
0255-5476,1662-9752
E-ISSN
1662-9752
DOI
10.4028/www.scientific.net/MSF.858.291
