Atomic Layer Deposition of Boron‐Doped Al 2 O 3 Dielectric Films
Atomic Layer Deposition of Boron‐Doped Al 2 O 3 Dielectric Films
About this item
Full title
Atomic Layer Deposition of Boron‐Doped Al 2 O 3 Dielectric Films
Author / Creator
Journal title
Advanced materials interfaces, 2023-06, Vol.10 (18)
Language
English
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Scope and Contents
Contents
This paper presents preparation of boron‐doped Al
2
O
3
thin films by atomic layer deposition (ALD) using phenylboronic acid (PBA) and trimethylaluminum (TMA) as precursors. Deposition temperatures of 160–300 °C are studied, giving a maximum growth per cycle (GPC) of 0.77 Å at 200 °C. Field emission scanning electron microscopy (FESEM)...
Alternative Titles
Full title
Atomic Layer Deposition of Boron‐Doped Al 2 O 3 Dielectric Films
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Identifiers
Primary Identifiers
Record Identifier
TN_cdi_crossref_citationtrail_10_1002_admi_202300173
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_citationtrail_10_1002_admi_202300173
Other Identifiers
ISSN
2196-7350
E-ISSN
2196-7350
DOI
10.1002/admi.202300173
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