Interplay of Precursor and Plasma for The Deposition of HfO 2 via PEALD: Film Growth and Dielectric...
Interplay of Precursor and Plasma for The Deposition of HfO 2 via PEALD: Film Growth and Dielectric Properties
About this item
Full title
Author / Creator
Journal title
Language
English
Formats
More information
Scope and Contents
Contents
HfO
2
thin films are appealing for microelectronic applications such as high‐
κ
dielectric layers, memristors, and ferroelectric memory devices. To fulfill the different requirements of each application, the properties of the deposited material need to be tuned accordingly. In this context, plasma‐enhanced atomic layer deposition (PEALD...
Alternative Titles
Full title
Interplay of Precursor and Plasma for The Deposition of HfO 2 via PEALD: Film Growth and Dielectric Properties
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_crossref_citationtrail_10_1002_admi_202300244
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_citationtrail_10_1002_admi_202300244
Other Identifiers
ISSN
2196-7350
E-ISSN
2196-7350
DOI
10.1002/admi.202300244
