On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using cu...
On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics
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New York: Springer US
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English
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New York: Springer US
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Contents
The temperature effect on the conduction mechanism of Au/Cu
2
O–CuO–PVA/n-Si (MPS) type Schottky barrier diodes (SBDs) have been investigated in detail in the wide temperature range of 100–380 K by using the forward bias current–voltage (I–V) measurements. It is observed that the semi logarithmic forward bias I–V plots have two distinct linea...
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Full title
On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics
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TN_cdi_crossref_citationtrail_10_1007_s10854_017_7900_8
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_citationtrail_10_1007_s10854_017_7900_8
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ISSN
0957-4522
E-ISSN
1573-482X
DOI
10.1007/s10854-017-7900-8
