Comparative Analysis of the Effects of Trap Charges on Single- and Double-Gate Extended-Source Tunne...
Comparative Analysis of the Effects of Trap Charges on Single- and Double-Gate Extended-Source Tunnel FET with δp+ SiGe Pocket Layer
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New York: Springer US
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English
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New York: Springer US
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This paper investigates the trap analysis of a double-gate extended-source tunnel field-effect transistor (DG-ESTFET) and single-gate extended-source tunnel field-effect transistor (SG-ESTFET) with a δp
+
SiGe pocket layer. The trap analysis of both structures is compared in terms of the currents, average subthreshold swing, threshold voltage...
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Full title
Comparative Analysis of the Effects of Trap Charges on Single- and Double-Gate Extended-Source Tunnel FET with δp+ SiGe Pocket Layer
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TN_cdi_crossref_citationtrail_10_1007_s11664_020_08151_5
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_citationtrail_10_1007_s11664_020_08151_5
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ISSN
0361-5235
E-ISSN
1543-186X
DOI
10.1007/s11664-020-08151-5
