Log in to save to my catalogue

Influence of surface defect density on the ultrafast hot carrier relaxation and transport in $${\hbo...

Influence of surface defect density on the ultrafast hot carrier relaxation and transport in $${\hbo...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_citationtrail_10_1038_s41598_020_67589_z

Influence of surface defect density on the ultrafast hot carrier relaxation and transport in $${\hbox {Cu}}_2 {\hbox {O}}$$ photoelectrodes

About this item

Full title

Influence of surface defect density on the ultrafast hot carrier relaxation and transport in $${\hbox {Cu}}_2 {\hbox {O}}$$ photoelectrodes

Journal title

Scientific reports, 2020-06, Vol.10 (1), Article 10686

Language

English

Formats

More information

Scope and Contents

Contents

Cuprous oxide (
$${\hbox {Cu}}_2 {\hbox {O}}$$
Cu
2
O
) is a promising material for photoelectrochemical energy conversion due to its small direct band gap, high absorbance, and its Earth-abundant constituents. High conversion efficiencies require transport of photoexcited charges to the interface without energy loss. We studied the...

Alternative Titles

Full title

Influence of surface defect density on the ultrafast hot carrier relaxation and transport in $${\hbox {Cu}}_2 {\hbox {O}}$$ photoelectrodes

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_crossref_citationtrail_10_1038_s41598_020_67589_z

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_citationtrail_10_1038_s41598_020_67589_z

Other Identifiers

ISSN

2045-2322

E-ISSN

2045-2322

DOI

10.1038/s41598-020-67589-z

How to access this item