Silicon‐Based 850 nm GaAs/GaAsP‐Strained Quantum Well Lasers with Active Region Dislocation Blocking...
Silicon‐Based 850 nm GaAs/GaAsP‐Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers
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Author / Creator
Li, Jian , Jiang, Chen , Liu, Hao , Zhang, Yang , Zhai, Hao , Wei, Xin , Wang, Qi , Wu, Gang , Li, Chuanchuan and Ren, Xiaomin
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English
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Quantum Well Lasers
Benefitting from the interaction of the GaAs/GaAsP strained quantum well and InAlAs active region dislocation blocking layer, in article number 2300348, Jian Li and co‐workers show that the threading dislocation penetration to the quantum well region of the silicon‐based quantum well lasers can be bended and blocked. By the i...
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Full title
Silicon‐Based 850 nm GaAs/GaAsP‐Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers
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TN_cdi_crossref_primary_10_1002_adpr_202470018
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_1002_adpr_202470018
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ISSN
2699-9293
E-ISSN
2699-9293
DOI
10.1002/adpr.202470018
