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High-Temperature Dielectric and Relaxation Behavior of Tantalum-Doped Sodium Bismuth Titanate-Barium...

High-Temperature Dielectric and Relaxation Behavior of Tantalum-Doped Sodium Bismuth Titanate-Barium...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_1007_s11664_020_08441_y

High-Temperature Dielectric and Relaxation Behavior of Tantalum-Doped Sodium Bismuth Titanate-Barium Titanate Ceramics

About this item

Full title

High-Temperature Dielectric and Relaxation Behavior of Tantalum-Doped Sodium Bismuth Titanate-Barium Titanate Ceramics

Publisher

New York: Springer US

Journal title

Journal of electronic materials, 2020-11, Vol.49 (11), p.6643-6655

Language

English

Formats

Publication information

Publisher

New York: Springer US

More information

Scope and Contents

Contents

Ta-doped 0.94Bi
0.5
Na
0.5
TiO
3
–0.06BaTiO
3
[(1 − 
x
)(0.94BNT–0.06BT) − 
x
Ta (
x 
= 0.00–0.02)] ceramics were prepared by a solid-state reaction process. X-ray diffraction (XRD) shows a rhombohedral symmetry with space group
R
3
c
for all samples. The introduction of Ta moves the low-tempera...

Alternative Titles

Full title

High-Temperature Dielectric and Relaxation Behavior of Tantalum-Doped Sodium Bismuth Titanate-Barium Titanate Ceramics

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_crossref_primary_10_1007_s11664_020_08441_y

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_1007_s11664_020_08441_y

Other Identifiers

ISSN

0361-5235

E-ISSN

1543-186X

DOI

10.1007/s11664-020-08441-y

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