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Field-effect transistor with a chemically synthesized MoS2 sensing channel for label-free and highly...

Field-effect transistor with a chemically synthesized MoS2 sensing channel for label-free and highly...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_1007_s12274_015_0744_8

Field-effect transistor with a chemically synthesized MoS2 sensing channel for label-free and highly sensitive electrical detection of DNA hybridization

About this item

Full title

Field-effect transistor with a chemically synthesized MoS2 sensing channel for label-free and highly sensitive electrical detection of DNA hybridization

Publisher

Beijing: Tsinghua University Press

Journal title

Nano research, 2015-07, Vol.8 (7), p.2340-2350

Language

English

Formats

Publication information

Publisher

Beijing: Tsinghua University Press

More information

Scope and Contents

Contents

A field-effect transistor (FET) with two-dimensional (2D) few-layer MoS2 as a sensing-channel material was investigated for label-free electrical detection of the hybridization of deoxyribonucleic acid (DNA) molecules. The high-quality MoS2-channel pattern was selectively formedthrough the chemical reaction of the Mo layer with H2S gas. The MoS2 FE...

Alternative Titles

Full title

Field-effect transistor with a chemically synthesized MoS2 sensing channel for label-free and highly sensitive electrical detection of DNA hybridization

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_crossref_primary_10_1007_s12274_015_0744_8

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_1007_s12274_015_0744_8

Other Identifiers

ISSN

1998-0124

E-ISSN

1998-0000

DOI

10.1007/s12274-015-0744-8

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