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Formation of In x Ga 1− x As nanocrystals in thin Si layers by ion implantation and flash lamp annea...

Formation of In x Ga 1− x As nanocrystals in thin Si layers by ion implantation and flash lamp annea...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_1088_1367_2630_aa66a5

Formation of In x Ga 1− x As nanocrystals in thin Si layers by ion implantation and flash lamp annealing

About this item

Full title

Formation of In x Ga 1− x As nanocrystals in thin Si layers by ion implantation and flash lamp annealing

Journal title

New journal of physics, 2017-06, Vol.19 (6), p.63019

Language

English

Formats

More information

Alternative Titles

Full title

Formation of In x Ga 1− x As nanocrystals in thin Si layers by ion implantation and flash lamp annealing

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_crossref_primary_10_1088_1367_2630_aa66a5

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_1088_1367_2630_aa66a5

Other Identifiers

ISSN

1367-2630

E-ISSN

1367-2630

DOI

10.1088/1367-2630/aa66a5

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