Log in to save to my catalogue

RF characteristics of 0.13-μm NMOS transistors for millimeter-wave application

RF characteristics of 0.13-μm NMOS transistors for millimeter-wave application

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_1108_MI_09_2013_0044

RF characteristics of 0.13-μm NMOS transistors for millimeter-wave application

About this item

Full title

RF characteristics of 0.13-μm NMOS transistors for millimeter-wave application

Publisher

Emerald Group Publishing Limited

Journal title

Microelectronics international, 2014-01, Vol.31 (2), p.116-120

Language

English

Formats

Publication information

Publisher

Emerald Group Publishing Limited

More information

Scope and Contents

Contents

Purpose
– The purpose of this paper is to present the high-frequency performance of 0.13-μm n-type metal-oxide-semiconductor (NMOS) transistors with various multi-finger configurations for implementation in millimeter-wave (mm-wave) frequency.
Design/methodology/approach
– A folded-like double-gate transistor layout is designed to enable t...

Alternative Titles

Full title

RF characteristics of 0.13-μm NMOS transistors for millimeter-wave application

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_crossref_primary_10_1108_MI_09_2013_0044

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_1108_MI_09_2013_0044

Other Identifiers

ISSN

1356-5362

DOI

10.1108/MI-09-2013-0044

How to access this item