RF characteristics of 0.13-μm NMOS transistors for millimeter-wave application
RF characteristics of 0.13-μm NMOS transistors for millimeter-wave application
About this item
Full title
Author / Creator
Publisher
Emerald Group Publishing Limited
Journal title
Language
English
Formats
Publication information
Publisher
Emerald Group Publishing Limited
Subjects
More information
Scope and Contents
Contents
Purpose
– The purpose of this paper is to present the high-frequency performance of 0.13-μm n-type metal-oxide-semiconductor (NMOS) transistors with various multi-finger configurations for implementation in millimeter-wave (mm-wave) frequency.
Design/methodology/approach
– A folded-like double-gate transistor layout is designed to enable t...
Alternative Titles
Full title
RF characteristics of 0.13-μm NMOS transistors for millimeter-wave application
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_crossref_primary_10_1108_MI_09_2013_0044
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_1108_MI_09_2013_0044
Other Identifiers
ISSN
1356-5362
DOI
10.1108/MI-09-2013-0044
