Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Fil...
Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x 0 ≤ x ≤ 1 Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)
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English
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Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase epitaxy from an Sn solution-melt. Such graded-gap solid solutions allow the integration of well-established silicon technology with the advantages of III-V semiconductor compounds. The structural...
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Full title
Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x 0 ≤ x ≤ 1 Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)
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TN_cdi_crossref_primary_10_1155_2021_3472487
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_1155_2021_3472487
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ISSN
1687-8108
E-ISSN
1687-8124
DOI
10.1155/2021/3472487
