In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototra...
In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor
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Author / Creator
Guo, Zhinan , Zeng, Yonghong , Meng, Fanxu , Qu, Hengze , Zhang, Shengli , Hu, Shipeng , Fan, Sidi , Zeng, Haibo , Cao, Rui , Prasad, Paras N. , Fan, Dianyuan and Zhang, Han
Publisher
Singapore: Springer Nature Singapore
Journal title
Language
English
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Publisher
Singapore: Springer Nature Singapore
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Contents
Neutron-transmutation doping (NTD) has been demonstrated for the first time in this work for substitutional introduction of tin (Sn) shallow donors into two-dimensional (2D) layered indium selenide (InSe) to manipulate electron transfer and charge carrier dynamics. Multidisciplinary study including density functional theory, transient optical absor...
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Full title
In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor
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Record Identifier
TN_cdi_crossref_primary_10_1186_s43593_022_00017_z
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_1186_s43593_022_00017_z
Other Identifiers
ISSN
2662-8643
E-ISSN
2662-8643
DOI
10.1186/s43593-022-00017-z
