Advancements in oxide-based resistive random-access memory (rram): A modern perspective on resistive...
Advancements in oxide-based resistive random-access memory (rram): A modern perspective on resistive switching mechanisms and conduction models
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English
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Resistive Random-Access Memory (RRAM) is a promising non-volatile memory technology due to its high-speed operation, low power consumption, and scalability. Since the early study on oxide-based RRAM, significant advancements have been made in understanding resistive switching mechanisms, improving material compositions, and integrating RRAM for neu...
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Advancements in oxide-based resistive random-access memory (rram): A modern perspective on resistive switching mechanisms and conduction models
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TN_cdi_crossref_primary_10_26634_jcir_12_2_21726
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_crossref_primary_10_26634_jcir_12_2_21726
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ISSN
2321-7502
E-ISSN
2322-035X
DOI
10.26634/jcir.12.2.21726
