Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors
Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors
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Publisher
Switzerland: MDPI AG
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Language
English
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Switzerland: MDPI AG
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Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. In the present study, we fabricate graphene/MoS2/(Cr/Au) vertical transistor based on the mechanical exfoliation and dry transfer method. Since the bottom electrode was made of monolayer graphene (Gr), the electri...
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Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors
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TN_cdi_doaj_primary_oai_doaj_org_article_0511a726a03447b4849bab98c6d97170
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_0511a726a03447b4849bab98c6d97170
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ISSN
2079-4991
E-ISSN
2079-4991
DOI
10.3390/nano8010014
