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Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_09b1c3e4689f460caedac4d5ccd089e0

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

About this item

Full title

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Publisher

London: Nature Publishing Group UK

Journal title

Nature communications, 2019-01, Vol.10 (1), p.230-9, Article 230

Language

English

Formats

Publication information

Publisher

London: Nature Publishing Group UK

More information

Scope and Contents

Contents

Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene...

Alternative Titles

Full title

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_09b1c3e4689f460caedac4d5ccd089e0

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_09b1c3e4689f460caedac4d5ccd089e0

Other Identifiers

ISSN

2041-1723

E-ISSN

2041-1723

DOI

10.1038/s41467-018-08227-1

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