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Growth of nonpolar a-plane AlGaN epilayer on Al-composition graded-AlGaN buffer layer and characteri...

Growth of nonpolar a-plane AlGaN epilayer on Al-composition graded-AlGaN buffer layer and characteri...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_0e066a9dd04b41d3b128c04fccdb63fe

Growth of nonpolar a-plane AlGaN epilayer on Al-composition graded-AlGaN buffer layer and characterization of its surface morphology and crystalline quality

About this item

Full title

Growth of nonpolar a-plane AlGaN epilayer on Al-composition graded-AlGaN buffer layer and characterization of its surface morphology and crystalline quality

Publisher

Bristol: IOP Publishing

Journal title

Materials research express, 2022-10, Vol.9 (10), p.105004

Language

English

Formats

Publication information

Publisher

Bristol: IOP Publishing

More information

Scope and Contents

Contents

Metal-organic chemical vapor deposition was successfully used to grow un-doped nonpolar
a-
plane AlGaN on an
r-
plane sapphire substrate. High-resolution x-ray (HR-XRD), atomic force microscopy, Polarization Indirect Microscopic Imaging, and Hall effect measurement were used to investigate the effect of the nonpolar
a-
plane AlGaN...

Alternative Titles

Full title

Growth of nonpolar a-plane AlGaN epilayer on Al-composition graded-AlGaN buffer layer and characterization of its surface morphology and crystalline quality

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_0e066a9dd04b41d3b128c04fccdb63fe

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_0e066a9dd04b41d3b128c04fccdb63fe

Other Identifiers

ISSN

2053-1591

E-ISSN

2053-1591

DOI

10.1088/2053-1591/ac9a24

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