On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FE...
On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET
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Basel: MDPI AG
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Language
English
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Basel: MDPI AG
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Contents
Silicon displacement defects are caused by various effects. For instance, epitaxial crystalline silicon growth and ion implantation often result in defects induced by the fabrication process, whereas displacement damage is induced by terrestrial cosmic radiation. Clustered displacement damage reportedly reduces the on-state current (Ion) in ordinar...
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Full title
On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET
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TN_cdi_doaj_primary_oai_doaj_org_article_0f7d19b86c0546d297c0c5061ba46a13
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_0f7d19b86c0546d297c0c5061ba46a13
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ISSN
2072-666X
E-ISSN
2072-666X
DOI
10.3390/mi13081276
