Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
About this item
Full title
Author / Creator
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
Formats
Publication information
Publisher
London: Nature Publishing Group UK
Subjects
More information
Scope and Contents
Contents
Ultra-wide band-gap nitrides have huge potential in micro- and optoelectronics due to their tunable wide band-gap, high breakdown field and energy density, excellent chemical and thermal stability. However, their application has been severely hindered by the low p-doping efficiency, which is ascribed to the ultrahigh acceptor activation energy orig...
Alternative Titles
Full title
Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
Authors, Artists and Contributors
Author / Creator
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_140e562a6c814998ba3234b10cd8dd3d
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_140e562a6c814998ba3234b10cd8dd3d
Other Identifiers
ISSN
2047-7538,2095-5545
E-ISSN
2047-7538
DOI
10.1038/s41377-021-00503-y
