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Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams

Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_183a56f464a4499ba76974788db2bf68

Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams

About this item

Full title

Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams

Publisher

Basel: MDPI AG

Journal title

Micromachines (Basel), 2023-07, Vol.14 (8), p.1510

Language

English

Formats

Publication information

Publisher

Basel: MDPI AG

More information

Scope and Contents

Contents

Silicon-on-insulator (SOI) wafers are crucial raw materials in the manufacturing process of microelectromechanical systems (MEMS). Residual stresses generated inside the wafers during the fabrication process can seriously affect the performance, reliability, and yield of MEMS devices. In this paper, a low-cost method based on mechanical modeling is...

Alternative Titles

Full title

Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_183a56f464a4499ba76974788db2bf68

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_183a56f464a4499ba76974788db2bf68

Other Identifiers

ISSN

2072-666X

E-ISSN

2072-666X

DOI

10.3390/mi14081510

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