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High Temperature-Resistant Transparent Conductive Films for Photoelectrochemical Devices Based on W/...

High Temperature-Resistant Transparent Conductive Films for Photoelectrochemical Devices Based on W/...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_1d7064c49e434020b6405ff66eafdbce

High Temperature-Resistant Transparent Conductive Films for Photoelectrochemical Devices Based on W/Ag Composite Nanonetworks

About this item

Full title

High Temperature-Resistant Transparent Conductive Films for Photoelectrochemical Devices Based on W/Ag Composite Nanonetworks

Publisher

Switzerland: MDPI AG

Journal title

Nanomaterials (Basel, Switzerland), 2023-02, Vol.13 (4), p.708

Language

English

Formats

Publication information

Publisher

Switzerland: MDPI AG

More information

Scope and Contents

Contents

The traditional Ag nanowire preparation means that it cannot meet the demanding requirements of photoelectrochemical devices due to the undesirable conductivity, difficulty in compounding, and poor heat resistance. Here, we prepared an Ag nanonetwork with superior properties using a special template method based on electrospinning technology. The t...

Alternative Titles

Full title

High Temperature-Resistant Transparent Conductive Films for Photoelectrochemical Devices Based on W/Ag Composite Nanonetworks

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_1d7064c49e434020b6405ff66eafdbce

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_1d7064c49e434020b6405ff66eafdbce

Other Identifiers

ISSN

2079-4991

E-ISSN

2079-4991

DOI

10.3390/nano13040708

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