Optical Study on Temperature-Dependent Absorption Edge of γ-InSe-Layered Semiconductor
Optical Study on Temperature-Dependent Absorption Edge of γ-InSe-Layered Semiconductor
About this item
Full title
Author / Creator
Publisher
Basel: MDPI AG
Journal title
Language
English
Formats
Publication information
Publisher
Basel: MDPI AG
Subjects
More information
Scope and Contents
Contents
We have studied the variations in the temperature-dependent absorption edge of a bulk InSe-layered semiconductor using photoconductivity (PC) measurements. From both the X-ray diffraction (XRD) and Raman experimental results, the structural phase of the as-prepared InSe sample was confirmed to be γ-polytype. Upon heating from 15 K to 300 K, the abs...
Alternative Titles
Full title
Optical Study on Temperature-Dependent Absorption Edge of γ-InSe-Layered Semiconductor
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_1e811171fcec408fbbb6b012dd1603c3
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_1e811171fcec408fbbb6b012dd1603c3
Other Identifiers
ISSN
2076-3417
E-ISSN
2076-3417
DOI
10.3390/app14156676
