Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
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New York: Springer New York
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Language
English
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New York: Springer New York
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Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of...
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Full title
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
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TN_cdi_doaj_primary_oai_doaj_org_article_21d56ebcf44846c8b686067a06c8c93f
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_21d56ebcf44846c8b686067a06c8c93f
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ISSN
1556-276X,1931-7573
E-ISSN
1556-276X
DOI
10.1007/s11671-010-9796-6
