Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling...
Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy
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Publisher
Germany: Beilstein-Institut zur Föerderung der Chemischen Wissenschaften
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Language
English
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Publisher
Germany: Beilstein-Institut zur Föerderung der Chemischen Wissenschaften
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Thermal oxidation of Si(113) in a monolayer regime was investigated using high-temperature scanning tunneling microscopy (STM). Dynamic processes during thermal oxidation were examined in three oxidation modes – oxidation, etching, and transition modes – in the third of which both oxidation and etching occur. A precise temperature–pressure growth m...
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Full title
Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy
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TN_cdi_doaj_primary_oai_doaj_org_article_2af0ca24a85c428e8c37393a138ed111
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_2af0ca24a85c428e8c37393a138ed111
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ISSN
2190-4286
E-ISSN
2190-4286
DOI
10.3762/bjnano.13.12
