ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)
ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)
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Basel: MDPI AG
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English
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Basel: MDPI AG
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In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response to the selection of active layers and electrodes. A comparison of ZnO devices assembled via differe...
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ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)
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TN_cdi_doaj_primary_oai_doaj_org_article_318ec752ee404f8fbea3a311f056a59c
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_318ec752ee404f8fbea3a311f056a59c
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ISSN
2073-4352
E-ISSN
2073-4352
DOI
10.3390/cryst13030416
