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Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics

Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_349ad47041044011bd75ad7932444b91

Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics

About this item

Full title

Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics

Publisher

Basel: MDPI AG

Journal title

Nanomaterials (Basel, Switzerland), 2023-03, Vol.13 (6), p.976

Language

English

Formats

Publication information

Publisher

Basel: MDPI AG

More information

Scope and Contents

Contents

In vitro and in vivo stimulation and recording of neuron action potential is currently achieved with microelectrode arrays, either in planar or 3D geometries, adopting different materials and strategies. IrO2 is a conductive oxide known for its excellent biocompatibility, good adhesion on different substrates, and charge injection capabilities high...

Alternative Titles

Full title

Plasma-Assisted Atomic Layer Deposition of IrO2 for Neuroelectronics

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_349ad47041044011bd75ad7932444b91

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_349ad47041044011bd75ad7932444b91

Other Identifiers

ISSN

2079-4991

E-ISSN

2079-4991

DOI

10.3390/nano13060976

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