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Single‐Crystal and Polycrystal SiC Bonding for Cost‐effective Chip Fabrication

Single‐Crystal and Polycrystal SiC Bonding for Cost‐effective Chip Fabrication

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_3fe96322a55047109ca4cf08a6c17954

Single‐Crystal and Polycrystal SiC Bonding for Cost‐effective Chip Fabrication

About this item

Full title

Single‐Crystal and Polycrystal SiC Bonding for Cost‐effective Chip Fabrication

Publisher

Weinheim: John Wiley & Sons, Inc

Journal title

Advanced materials interfaces, 2025-03, Vol.12 (6), p.n/a

Language

English

Formats

Publication information

Publisher

Weinheim: John Wiley & Sons, Inc

More information

Scope and Contents

Contents

High‐quantity single‐crystal silicon carbide (SiC) is widely used in power electronics due to its excellent breakdown electric field strength and high thermal conductivity. However, back grinding during the chip fabrication generally results in ≈70% of single‐crystal SiC being wasted, leading to the high cost of SiC chips. In order to improve the u...

Alternative Titles

Full title

Single‐Crystal and Polycrystal SiC Bonding for Cost‐effective Chip Fabrication

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_3fe96322a55047109ca4cf08a6c17954

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_3fe96322a55047109ca4cf08a6c17954

Other Identifiers

ISSN

2196-7350

E-ISSN

2196-7350

DOI

10.1002/admi.202400816

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