High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics
High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics
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Publisher
London: Nature Publishing Group UK
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Language
English
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London: Nature Publishing Group UK
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Contents
2D Transition Metal Dichalcogenides hold a promising potential in future optoelectronic applications due to their high photoresponsivity and tunable band structure for broadband photodetection. In imaging applications, the detection of weak light signals is crucial for creating a better contrast between bright and dark pixels in order to achieve hi...
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Full title
High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics
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TN_cdi_doaj_primary_oai_doaj_org_article_41ed3dedf80d438b9abe08ec480e6d8d
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_41ed3dedf80d438b9abe08ec480e6d8d
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ISSN
2662-4443
E-ISSN
2662-4443
DOI
10.1038/s43246-020-00103-0
