Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature
Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature
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Publisher
London: Nature Publishing Group UK
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Language
English
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London: Nature Publishing Group UK
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Contents
Current silicon-based CMOS devices face physical limitations in downscaling size and power loss, restricting their capability to meet the demands for data storage and information processing of emerging technologies. One possible alternative is to encode the information in a non-volatile magnetic state and manipulate this spin state electronically,...
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Full title
Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature
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TN_cdi_doaj_primary_oai_doaj_org_article_43c4a7a0936e46eebc1ab5ac8eb02fd9
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_43c4a7a0936e46eebc1ab5ac8eb02fd9
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ISSN
2041-1723
E-ISSN
2041-1723
DOI
10.1038/s41467-024-52835-z
