Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frus...
Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate
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Chester: International Union of Crystallography
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English
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Chester: International Union of Crystallography
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The compound α-Ga2O3 is an ultra-wide-bandgap semiconductor and possesses outstanding properties such as a high breakdown voltage and symmetry compared with other phases. It has been studied for applications in high-performance power devices. However, it is difficult to obtain a high-quality thin films because α-Ga2O3 can only grow heteroepitaxiall...
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Full title
Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate
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TN_cdi_doaj_primary_oai_doaj_org_article_44e5c897db9d43c1a684d115035f4a35
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_44e5c897db9d43c1a684d115035f4a35
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ISSN
2052-2525
E-ISSN
2052-2525
DOI
10.1107/S2052252521003389
