Superior High Transistor’s Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFET
Superior High Transistor’s Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFET
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Basel: MDPI AG
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English
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Basel: MDPI AG
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This work reports the first nanocrystalline SnON (7.6% nitrogen content) nanosheet n-type Field-Effect Transistor (nFET) with the transistor’s effective mobility (µeff) as high as 357 and 325 cm2/V-s at electron density (Qe) of 5 × 1012 cm−2 and an ultra-thin body thickness (Tbody) of 7 nm and 5 nm, respectively. At the same Tbody and Qe, these µef...
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Full title
Superior High Transistor’s Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFET
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TN_cdi_doaj_primary_oai_doaj_org_article_4943b4cf2abf4c80a27d028380742496
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_4943b4cf2abf4c80a27d028380742496
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ISSN
2079-4991
E-ISSN
2079-4991
DOI
10.3390/nano13121892
