Performance of arsenene and antimonene double-gate MOSFETs from first principles
Performance of arsenene and antimonene double-gate MOSFETs from first principles
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London: Nature Publishing Group UK
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English
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London: Nature Publishing Group UK
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In the race towards high-performance ultra-scaled devices, two-dimensional materials offer an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It is thus urgent to study the most promising candidates in realistic configurations, and here we present detailed multiscale simulations of field-effect transistors b...
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Performance of arsenene and antimonene double-gate MOSFETs from first principles
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TN_cdi_doaj_primary_oai_doaj_org_article_49ae8650ef164d33965db1e2de9c405b
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_49ae8650ef164d33965db1e2de9c405b
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ISSN
2041-1723
E-ISSN
2041-1723
DOI
10.1038/ncomms12585
