Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process
Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process
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Publisher
Switzerland: MDPI AG
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Language
English
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Publisher
Switzerland: MDPI AG
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Since the avalanche phenomenon was first found in bulk materials, avalanche photodiodes (APDs) have been exclusively investigated. Among the many devices that have been developed, silicon APDs stand out because of their low cost, performance stability, and compatibility with CMOS. However, the increasing industrial needs pose challenges for the fab...
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Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process
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TN_cdi_doaj_primary_oai_doaj_org_article_4d30b263950741859775750b5797d9ff
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_4d30b263950741859775750b5797d9ff
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ISSN
1424-8220
E-ISSN
1424-8220
DOI
10.3390/s24020640
