Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2
Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2
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London: Nature Publishing Group UK
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English
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London: Nature Publishing Group UK
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HfO
2
-based thin films hold huge promise for integrated devices as they show full compatibility with semiconductor technologies and robust ferroelectric properties at nanometer scale. While their polarization switching behavior has been widely investigated, their electromechanical response received much less attention so far. Here, we demons...
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Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2
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TN_cdi_doaj_primary_oai_doaj_org_article_4f5ee4837dbb4177a3443d1b75c52766
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_4f5ee4837dbb4177a3443d1b75c52766
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2041-1723
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2041-1723
DOI
10.1038/s41467-024-44690-9