Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Trans...
Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors
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Basel: MDPI AG
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Language
English
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Basel: MDPI AG
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A full understanding of the impact of charge trapping on the memory window (MW) of HfO2-based ferroelectric field effect transistors (FeFETs) will permit the design of program and erase protocols, which will guide the application of these devices and maximize their useful life. The effects of charge trapping have been studied by changing the parame...
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Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors
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TN_cdi_doaj_primary_oai_doaj_org_article_50fe6a0261c743c3a19d4f1201a324e9
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_50fe6a0261c743c3a19d4f1201a324e9
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ISSN
2079-4991
E-ISSN
2079-4991
DOI
10.3390/nano13040638
