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Universal radiation tolerant semiconductor

Universal radiation tolerant semiconductor

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_52702cecbf87439db6e4bf134f8f58db

Universal radiation tolerant semiconductor

About this item

Full title

Universal radiation tolerant semiconductor

Publisher

London: Nature Publishing Group UK

Journal title

Nature communications, 2023-08, Vol.14 (1), p.4855-4855, Article 4855

Language

English

Formats

Publication information

Publisher

London: Nature Publishing Group UK

More information

Scope and Contents

Contents

Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta (γ/β) double polymorph Ga
2
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Alternative Titles

Full title

Universal radiation tolerant semiconductor

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_52702cecbf87439db6e4bf134f8f58db

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_52702cecbf87439db6e4bf134f8f58db

Other Identifiers

ISSN

2041-1723

E-ISSN

2041-1723

DOI

10.1038/s41467-023-40588-0

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