Mobility enhancement in heavily doped semiconductors via electron cloaking
Mobility enhancement in heavily doped semiconductors via electron cloaking
About this item
Full title
Author / Creator
Zhou, Jiawei , Zhu, Hangtian , Song, Qichen , Ding, Zhiwei , Mao, Jun , Ren, Zhifeng and Chen, Gang
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
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Publication information
Publisher
London: Nature Publishing Group UK
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Scope and Contents
Contents
Doping is central for solid-state devices from transistors to thermoelectric energy converters. The interaction between electrons and dopants plays a pivotal role in carrier transport. Conventional theory suggests that the Coulomb field of the ionized dopants limits the charge mobility at high carrier densities, and that either the atomic details o...
Alternative Titles
Full title
Mobility enhancement in heavily doped semiconductors via electron cloaking
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Author / Creator
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Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_59fb1101d4d341d8843289ff8e02fb40
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_59fb1101d4d341d8843289ff8e02fb40
Other Identifiers
ISSN
2041-1723
E-ISSN
2041-1723
DOI
10.1038/s41467-022-29958-2
