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Spin-texture inversion in the giant Rashba semiconductor BiTeI

Spin-texture inversion in the giant Rashba semiconductor BiTeI

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_60d1b5d302fe4962b62ce75962f34c69

Spin-texture inversion in the giant Rashba semiconductor BiTeI

About this item

Full title

Spin-texture inversion in the giant Rashba semiconductor BiTeI

Publisher

London: Nature Publishing Group UK

Journal title

Nature communications, 2016-05, Vol.7 (1), p.11621-11621, Article 11621

Language

English

Formats

Publication information

Publisher

London: Nature Publishing Group UK

More information

Scope and Contents

Contents

Semiconductors with strong spin–orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the full spin texture in momentum space for such materials and its relation to the microscopic structure of the electronic wave functions is experimental...

Alternative Titles

Full title

Spin-texture inversion in the giant Rashba semiconductor BiTeI

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_60d1b5d302fe4962b62ce75962f34c69

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_60d1b5d302fe4962b62ce75962f34c69

Other Identifiers

ISSN

2041-1723

E-ISSN

2041-1723

DOI

10.1038/ncomms11621

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