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Data-Driven Analysis of High-Temperature Fluorocarbon Plasma for Semiconductor Processing

Data-Driven Analysis of High-Temperature Fluorocarbon Plasma for Semiconductor Processing

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_64f028e94b494caea3872b18f2b59911

Data-Driven Analysis of High-Temperature Fluorocarbon Plasma for Semiconductor Processing

About this item

Full title

Data-Driven Analysis of High-Temperature Fluorocarbon Plasma for Semiconductor Processing

Publisher

Switzerland: MDPI AG

Journal title

Sensors (Basel, Switzerland), 2024-11, Vol.24 (22), p.7307

Language

English

Formats

Publication information

Publisher

Switzerland: MDPI AG

More information

Scope and Contents

Contents

The semiconductor industry increasingly relies on high aspect ratio etching facilitated by Amorphous Carbon Layer (ACL) masks for advanced 3D-NAND and DRAM technologies. However, carbon contamination in ACL deposition chambers necessitates effective fluorine-based plasma cleaning. This study employs a high-temperature inductively coupled plasma (IC...

Alternative Titles

Full title

Data-Driven Analysis of High-Temperature Fluorocarbon Plasma for Semiconductor Processing

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_64f028e94b494caea3872b18f2b59911

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_64f028e94b494caea3872b18f2b59911

Other Identifiers

ISSN

1424-8220

E-ISSN

1424-8220

DOI

10.3390/s24227307

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