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Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable i...

Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable i...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_65f632af36364bbaa2f92e55a6c092fe

Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction

About this item

Full title

Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction

Publisher

London: Nature Publishing Group UK

Journal title

Nature communications, 2021-06, Vol.12 (1), p.3336-3336, Article 3336

Language

English

Formats

Publication information

Publisher

London: Nature Publishing Group UK

More information

Scope and Contents

Contents

Layered transition metal dichalcogenides have shown tremendous potential for photodetection due to their non-zero direct bandgaps, high light absorption coefficients and carrier mobilities, and ability to form atomically sharp and defect-free heterointerfaces. A critical and fundamental bottleneck in the realization of high performance detectors is...

Alternative Titles

Full title

Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_doaj_primary_oai_doaj_org_article_65f632af36364bbaa2f92e55a6c092fe

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_65f632af36364bbaa2f92e55a6c092fe

Other Identifiers

ISSN

2041-1723

E-ISSN

2041-1723

DOI

10.1038/s41467-021-23679-8

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