Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure
Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure
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Publisher
Basel: MDPI AG
Journal title
Language
English
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Publication information
Publisher
Basel: MDPI AG
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Scope and Contents
Contents
For the first time, a novel germanium (Ge) bi-stable resistor (biristor) with a vertical pillar structure was implemented on a bulk substrate. The basic structure of the Ge pillar-typed biristor is a p-n-p bipolar junction transistor (BJT) with an open base (floating), which is equivalent to a gateless p-channel metal oxide semiconductor field-effe...
Alternative Titles
Full title
Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure
Authors, Artists and Contributors
Author / Creator
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Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_675ca81368fe42e6a41437ed16b7d41a
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_675ca81368fe42e6a41437ed16b7d41a
Other Identifiers
ISSN
2072-666X
E-ISSN
2072-666X
DOI
10.3390/mi12080899
