Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
About this item
Full title
Author / Creator
Kushwaha, S. K. , Pletikosić, I. , Liang, T. , Gyenis, A. , Lapidus, S. H. , Tian, Yao , Zhao, He , Burch, K. S. , Lin, Jingjing , Wang, Wudi , Ji, Huiwen , Fedorov, A. V. , Yazdani, Ali , Ong, N. P. , Valla, T. , Cava, R. J. , Brookhaven National Laboratory (BNL), Upton, NY (United States) and Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
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Publication information
Publisher
London: Nature Publishing Group UK
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More information
Scope and Contents
Contents
A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the...
Alternative Titles
Full title
Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
Authors, Artists and Contributors
Author / Creator
Pletikosić, I.
Liang, T.
Gyenis, A.
Lapidus, S. H.
Tian, Yao
Zhao, He
Burch, K. S.
Lin, Jingjing
Wang, Wudi
Ji, Huiwen
Fedorov, A. V.
Yazdani, Ali
Ong, N. P.
Valla, T.
Cava, R. J.
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_68c62d1dffae4a1abd342b8b27ba139f
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_68c62d1dffae4a1abd342b8b27ba139f
Other Identifiers
ISSN
2041-1723
E-ISSN
2041-1723
DOI
10.1038/ncomms11456
