Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carri...
Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3
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Publisher
London: Nature Publishing Group UK
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Language
English
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Publisher
London: Nature Publishing Group UK
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Gallium nitride (GaN) is one of the most technologically important semiconductors and a fundamental component in many optoelectronic and power devices. Low-resistivity GaN wafers are in demand and actively being developed to improve the performance of vertical GaN power devices necessary for high-voltage and high-frequency applications. For the dev...
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Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3
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TN_cdi_doaj_primary_oai_doaj_org_article_763dd210632d425e936ddcb1a042cc24
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_763dd210632d425e936ddcb1a042cc24
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ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/s41598-021-97253-z
