The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by th...
The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature
About this item
Full title
Author / Creator
Xie, Xiaoming , Hu, T. , Di, Z. F. and Sun, Y. B.
Publisher
Cairo, Egypt: Hindawi Publishing Corporation
Journal title
Language
English
Formats
Publication information
Publisher
Cairo, Egypt: Hindawi Publishing Corporation
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More information
Scope and Contents
Contents
We have fabricated the heavily Ga-doped layer in Ge single crystal by the implantation and rapid thermal annealing method. The samples show a crossover from the insulating to the superconducting behavior as the annealing temperature increases. Transport measurements suggest that the superconductivity is from the heavily Ga-doped layer in Ge.
Alternative Titles
Full title
The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature
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Author / Creator
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Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_785928452d4e455590d21d14d033d9e0
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_785928452d4e455590d21d14d033d9e0
Other Identifiers
ISSN
1687-8108
E-ISSN
1687-8124
DOI
10.1155/2015/963768
