Enhanced Transparency and Resistive Switching Characteristics in AZO/HfO2/Ti RRAM Device via Post An...
Enhanced Transparency and Resistive Switching Characteristics in AZO/HfO2/Ti RRAM Device via Post Annealing Process
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Basel: MDPI AG
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Language
English
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Basel: MDPI AG
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As interest in transparent electronics increases, ensuring the reliability of transparent RRAM (T-RRAM) devices, which can be used to construct transparent electronics, has become increasingly important. However, defects and traps within these T-RRAM devices can degrade their reliability. In this study, we investigated the improvement of transparen...
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Enhanced Transparency and Resistive Switching Characteristics in AZO/HfO2/Ti RRAM Device via Post Annealing Process
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TN_cdi_doaj_primary_oai_doaj_org_article_7ac6ac42a3e947119f20a87344dff52e
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_7ac6ac42a3e947119f20a87344dff52e
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ISSN
2304-6740
E-ISSN
2304-6740
DOI
10.3390/inorganics12120299
