Well-defined double hysteresis loop in NaNbO3 antiferroelectrics
Well-defined double hysteresis loop in NaNbO3 antiferroelectrics
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Author / Creator
Luo, Nengneng , Ma, Li , Luo, Gengguang , Xu, Chao , Rao, Lixiang , Chen, Zhengu , Cen, Zhenyong , Feng, Qin , Chen, Xiyong , Toyohisa, Fujita , Zhu, Ye , Hong, Jiawang , Li, Jing-Feng and Zhang, Shujun
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
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Publisher
London: Nature Publishing Group UK
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Scope and Contents
Contents
Antiferroelectrics (AFEs) are promising candidates in energy-storage capacitors, electrocaloric solid-cooling, and displacement transducers. As an actively studied lead-free antiferroelectric (AFE) material, NaNbO
3
has long suffered from its ferroelectric (FE)-like polarization-electric field (
P
-
E
) hysteresis loops with high...
Alternative Titles
Full title
Well-defined double hysteresis loop in NaNbO3 antiferroelectrics
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Record Identifier
TN_cdi_doaj_primary_oai_doaj_org_article_7ba0e28ecd1b4f438819dc1f5b1d81e3
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_7ba0e28ecd1b4f438819dc1f5b1d81e3
Other Identifiers
ISSN
2041-1723
E-ISSN
2041-1723
DOI
10.1038/s41467-023-37469-x
