Properties of the Si-SiO2 Interfaces in MOS Structures with Nitrogen Doped Silicon
Properties of the Si-SiO2 Interfaces in MOS Structures with Nitrogen Doped Silicon
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Ostrava: Faculty of Electrical Engineering and Computer Science VSB - Technical University of Ostrava
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English
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Ostrava: Faculty of Electrical Engineering and Computer Science VSB - Technical University of Ostrava
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The article presents the results of capacitance measurements on MOS structures with a silicon substrate that wasdoped by nitrogen during the growth of the single crystal by Czochralski's method. Attention is paid to the energydistribution of the trap density at the Si-SiO2 interface. The effect of the bond of nitrogen and oxygen brought about a sli...
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Properties of the Si-SiO2 Interfaces in MOS Structures with Nitrogen Doped Silicon
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TN_cdi_doaj_primary_oai_doaj_org_article_7d8c46618c85487f989907aff5f763b5
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_7d8c46618c85487f989907aff5f763b5
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ISSN
1336-1376
E-ISSN
1804-3119
