Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transisto...
Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
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London: Nature Publishing Group UK
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English
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London: Nature Publishing Group UK
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In this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide. The band diagram, I–V characteristics, memory window, and operation were analyzed using a commercial technology computer-aided design simulation. In an
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-chann...
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Full title
Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
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TN_cdi_doaj_primary_oai_doaj_org_article_80e09c838d104eb6b50c1c1939b2590e
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_80e09c838d104eb6b50c1c1939b2590e
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ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/s41598-021-98182-7
