Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in fr...
Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates
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Publisher
London: Nature Publishing Group UK
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Language
English
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Publisher
London: Nature Publishing Group UK
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Contents
The electrical characteristics of Schottky contacts on individual threading dislocations (TDs) with a screw-component in GaN substrates and the structures of these TDs were investigated to assess the effects of such defects on reverse leakage currents. Micrometer-scale platinum/GaN Schottky contacts were selectively fabricated on screw- and mixed-T...
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Full title
Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates
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TN_cdi_doaj_primary_oai_doaj_org_article_83677874ee45481488b4e35add2d0834
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_doaj_primary_oai_doaj_org_article_83677874ee45481488b4e35add2d0834
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ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/s41598-023-29458-3
